2N5551L-A-AB3-B View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
'2N5551L-A-AB3-B' PDF : 4 Pages View PDF
2N5551
TYPICAL CHARACTERISTICS
Collector Output Capacitance
10
8
f=1MHz
IE=0
6
4
2
0
100
101
102
Collector-Base Voltage (V)
Base-Emitter on Voltage
103
VCE=5V
102
101
100
0
0.2 0.4 0.6 0.8 1.0
Base-Emitter Voltage (V)
Current Gain-Bandwidth Product
103
VCE=10V
102
101
100
100
101
102
103
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
DC Current Gain
103
VCE=5V
102
101
100
10-1
100
101
102
103
Collector Current, IC (mA)
Saturation Voltage
101
IC=10*IB
100
VBE(SAT)
10-1
VCE(SAT)
10-2
10-1
100
101
102
103
Collector Current, IC (mA)
3 of 4
QW-R201-002.B
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