2N5867 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2N5867' PDF : 2 Pages View PDF
1
2
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -100mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -1A
VeE(sat) Base-Emitter Saturation Voltage
ICEO
Collector Cutoff Current
lc= -5A; IB= -1A
VCE= -30V; IB= 0
ICBO
Collector Cutoff Current
VCB= -60V; |E= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-t
DC Current Gain
lc=-1.5A;VcE=-4V
hFE-2
DC Current Gain
lc= -5A; VCE= -4V
fr
Current-Gain—Bandwidth Product lc= -0.5A; Vc£= -10V; ftest= 1.0MHz
2N5867
MIN MAX UNIT
-60
V
-1.0
V
-1.5
V
-2.0
mA
-1.0
mA
-1.0
mA
20
100
4
4
MHz
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