2N6053 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

MFG CO.

2N6053

COMPLEMENTARY POWER DARLINGTON

Comset Semiconductors 

1 2 3

COMPLEMENTARY POWER DARLINGTON

The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and

are mounted in Jedec TO-3 metal case.

They are intended for use in power linear and switching applications.

The complementary NPN type is the 2N6055

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEO

VCBO

VEBO

IC

IB

PTOT

TJ

TS

Ratings

#Collector-Emitter Voltage

IB=0

Collector-Base Voltage

IE=0

Emitter-Base Voltage

Collector Current

Base Current

Total Dissipation

Junction Temperature

Continuous

Peak

@ TC = 25°

Storage Temperature

2N6053

2N6055

2N6053

2N6055

2N6053

2N6055

2N6053

2N6055

2N6053

2N6055

2N6053

2N6055

2N6053

2N6055

2N6053

2N6055

2N6053

2N6055

THERMAL CHARACTERISTICS

Symbol

RthJC

Ratings

Thermal Resistance, Junction to Case

2N6053

2N6055

Value

60

Unit

V

60

V

5.0

V

8

A

16

120

mA

100

Watts

°C

-65 to +200

°C

Value

1.75

Unit

°C/W

1

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