2N6102 View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
MFG CO.
'2N6102' PDF : 2 Pages View PDF
1
2
2N6102/2N6103
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCE(sat-1) Collector-emitter saturation voltage IC=5A;IB=0.5A
VCE(sat-2) Collector-emitter saturation voltage IC=16A;IB=3.2A
VBE-1
Base-emitter on voltage
IC=5A ; VCE=4V
VBE-2
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=16A ; VCE=4V
VCB=Rated VCBO;IE=0
TC=150 ℃
VEB=8V; IC=0
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=8A ; VCE=4V
IC=15A ; VCE=4V
IC=0.5A ; VCE=4V
MIN TYP. MAX UNIT
45
V
1.3
V
2.5
V
1.3
V
3.5
V
0.5
2.0
mA
1.0 mA
15
80
5
0.8
MHz
PACKAGE OUTLINE Unit:mm
9.90±0.20
φ3.60±0.20
4.50±0.20
1.30±0.20
1.27±0.20
1.52±0.20
2.54typ
2.54typ
2.40±0.20
0.80±0.20
0.50±0.20
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/
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