SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6102 2N6103
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCE(sat-1) Collector-emitter saturation voltage IC=5A;IB=0.5A
VCE(sat-2) Collector-emitter saturation voltage IC=16A;IB=3.2A
VBE-1
Base-emitter on voltage
IC=5A ; VCE=4V
VBE-2
ICBO
IEBO
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
IC=16A ; VCE=4V
VCB=Rated VCBO;IE=0
TC=150
VEB=8V; IC=0
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=8A ; VCE=4V
IC=15A ; VCE=4V
IC=0.5A ; VCE=4V
MIN TYP. MAX UNIT
45
V
1.3
V
2.5
V
1.3
V
3.5
V
0.5
2.0
mA
1.0 mA
15
80
5
0.8
MHz
2