2N6134 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

MFG CO.

2N6134

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

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SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·DC Current Gain-

: hFE = 20-100@ IC= -2.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -80V(Min)

·Complement to Type 2N6131

APPLICATIONS

·Designed for use in general purpose amplifer and switching

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-7

A

IB

Base Current

PC

Collector Power Dissipation

TC=25℃

Tj

Junction Temperature

-2

A

50

W

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

2N6134

SPTECH website：www.superic-tech.com

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