2N6261 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
MFG CO.
'2N6261' PDF : 3 Pages View PDF
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A
VBE
Base -emitter on voltage
ICEV
Collector cut-off current
ICEO
Collector cut-off current
IC=1.5A ; VCE=2V
VCE=80V;VBE(off)=-1.5V
TC=150℃
VCE=60V; IB=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=2V
hFE-2
DC current gain
IC=1.5A ; VCE=2V
www.jmnic.com
2N6261
MIN
TYP.
MAX UNIT
80
V
0.5
V
1.5
V
0.5
1.0
mA
0.5
mA
0.2
mA
5
25
100
JMnic
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