2N6297 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
MFG CO.
'2N6297' PDF : 3 Pages View PDF
Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N6296 2N6297
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Complement to type 2N6294/6295
APPLICATIONS
·For high gain amplifier and medium
speed switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6296
2N6297
VCEO
2N6296
Collector-emitter voltage
2N6298
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
60
80
60
80
5
4
8
80
50
150
-65~200
UNIT
V
V
V
A
A
mA
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
MAX
3.5
UNIT
℃/W
JMnic
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