2N6299 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'2N6299' PDF : 3 Pages View PDF
Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Low collector saturation voltage
·Complement to type 2N6300/6301
APPLICATIONS
·General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2N6298 2N6299
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6298
2N6299
VCEO
2N6298
Collector-emitter voltage
2N6299
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
-60
-80
-60
-80
-5
-8
-16
-0.12
75
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
MAX
2.33
UNIT
℃/W
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