2N6304 View Datasheet(PDF) - Advanced Power Technology

Part Name

Description

MFG CO.

2N6304

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology  

1 2 3 4

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

2N6304

Features

• Silicon RF NPN, TO-72, UHF general purpose Low Noise

Transistor

• Noise Figure = 5.0 dB (typ) @ f = 450 MHz

• High FT - 1.4 GHz (min) @ IC = 10 mAdc

• Maximum Available Gain = 14 dB (min) @ f = 500 MHz

2

1

3

4

1. Emitter

2. Base

3. Collector

4. Case

TO-72

DESCRIPTION:

The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

P

D

Total Device Dissipation @ TA = 25º C

Derate above 25º C

Value

15

30

3.5

50

200

1.14

Unit

Vdc

Vdc

Vdc

mA

mWatts

mW/ ºC

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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