2N6578 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2N6578' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon NPN Darlingtion Power Transistor
2N6578
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
: hFE = 2000 (Min) @ IC = 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
APPLICATIONS
·Power switching
·Hammer drivers
·Series and shunt regulator
·Audio amplifiers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current -Continuous
15
A
ICP
Collector Current-Peak
30
A
IB
Base Current
0.25
A
PC
Collector Power Dissipation@TC=25℃ 120
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.46
UNIT
℃/W
SPTECH website：www.superic-tech.com
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