2N6800LCC4 View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
MFG CO.
'2N6800LCC4' PDF : 2 Pages View PDF
1
2
2N6800LCC4
STATIC ELECTRICAL RATINGS (Tcase=25°C unless otherwise stated)
Symbol Parameter
Test Conditions
Min. Typ.
BVDSS
IDSS
IGSS
VGS(TH)
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate – Source Leakage Current
Gate Threshold Voltage
VGS = 0V
VDS = 320V
VGS = ±20V
VDS ≥ VGS
RDS(ON)
Drain – Source On State Resistance3
gFS
Forward Transconductance3
DYNAMIC CHARACTERISTICS
VGS = 10V
VGS = 10V
VDS ≥ 15V
ID = 250µA
VGS = 0V
TC = 125°C
VDS = 0V
ID = 250µA
TC = 125°C
TC = -55°C
ID = 2A
TC = 125°C
ID = 3A
IDS = 2A
400 -
-
-
-
-
-
-
2.0
-
1.0
-
-
-
-
-
-
-
-
-
2
-
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
f = 1.0MHz
VGS = 0V
Crss
Reverse Transfer Capacitance
- 620
- 200
-
75
Qg
Total Gate Charge2
Qgs
Gate – Source Charge2
Qgd
Gate – Drain Charge2
VDS = 200V
VGS = 10V
ID = 3A
19.1 -
1.0
-
6.7
-
Td(on)
Turn-On Delay
-
-
tr
Rise Time
Td(off)
Turn-Off Delay Time
VDD = 200V
RG = 7.5Ω
ID = 3A
VGS = 10V
-
-
-
-
tf
Fall Time
-
-
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current (MAX)
-
-
ISM
Pulsed Source Current (MAX)1
-
-
VSD
Diode Forward Voltage2
VGS = 0V
Is = 3A
-
-
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge2
VGS = 0V
Is = 3A
di/dt=100A/µs VDD ≤ 50V
-
-
-
-
Max.
-
25
250
±100
4.0
-
5.0
1.0
2.40
1.15
-
-
-
-
33
5.8
19.9
30
35
55
35
3
12
1.4
700
6.2
Unit
V
µA
nA
V
Ω
S
pF
nC
ns
A
V
ns
µC
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7820, ISSUE 1
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