2N7002 View Datasheet(PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
Part Name
Description
MFG CO.
'2N7002' PDF : 4 Pages View PDF
Plastic-Encapsulate Mosfets
2N7002
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V = 30V, I = 0.5A
RG = 4.7Ω VGS = 4.5V
5
ns
15
ns
7
ns
8
ns
Qg
Total gate charge Gate-source charge
VDD = 30V, ID = 1A,
Qgs
Gate-drain charge
VGS = 5V
Qgd
1.4
nC
0.8
2
nC
0.5
nC
ISD
ISDM (4)
VSD (5)
Source-drain current Source-drain
current (pulsed)
Forward on voltage
ISD = 1A, VGS = 0
0.35
A
1.40
A
1.2
V
32
ns
trr Qrr
Reverse recovery time Reverse recovery ISD = 1A, di/dt = 100A/µs,
25
nC
IRRM
charge Reverse recovery current
VDD = 20V, Tj = 150°C
1.6
A
NOTE: 1. Pulse width limited by safe operating area
3.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
5.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. When mounted on 1inch2 FR-4, 2 Oz copper board.
4.Pulse width limited by safe operating area.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P2
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