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2SC2022 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
MFG CO.
2SC2022
Iscsemi
Inchange Semiconductor Iscsemi
'2SC2022' PDF : 3 Pages View PDF
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA
ICBO
Collector cut-off current
VCB=300V ;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=200m A ; VCE=4V
fT
Transition frequency
IC=100mA ; VCE=12V
Product Specification
2SC2022
MIN TYP. MAX UNIT
300
V
300
V
6
V
1.0
V
1.0
mA
1.0
mA
30
10
MHz
2
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