2SC2577 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2SC2577' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
hFE Classifications
O
P
Y
50-100 70-140 90-180
2SC2577
MIN TYP. MAX UNIT
80
V
1.5
V
10 μA
10 μA
50
110
pF
20
MHz
SPTECH website：www.superic-tech.com
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