2SC2827 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2SC2827' PDF : 2 Pages View PDF
1
2
Silicon NPN Power Transistor
2SC2827
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage^ lc= 3A; IB= 0.6A
VsE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
ICEO
Collector Cutoff Current
VCE= 320V; IB= 0
IEBO
Emitter Cutoff Current
VEEF 7V; lc= 0
riFE
DC Current Gain
lc= 3A; VCE= 2V
fi
Current-Gain—Bandwidth Product lc=0.3A;VCE=10V;f=1MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 3A, IB1= -IB2= 0.6A
MIN TYP. MAX UNIT
400
V
0.7
V
1.5
V
100 u A
100 u A
1.0
mA
10
10
MHz
1.0
Ms
2.0
Ms
0.5
us
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