2SC2881 View Datasheet(PDF) - WEJ ELECTRONIC CO.
Part Name
Description
MFG CO.
'2SC2881' PDF : 1 Pages View PDF
1
RoHS
2SC2881
2SC2881 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T PCM:
500 mW (Tamb=25℃)
.,L Collector current
ICM:
800 mA
Collector-base voltage
O V(BR)CBO:
120 V
Operating and storage junction temperature range
C TJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
N Collector-base breakdown voltage
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R Collector cut-off current
T Emitter cut-off current
C DC current gain
E Collector-emitter saturation voltage
Base-emitter voltage
L Transition frequency
E Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=120V, IE=0
VEB=5V, IC=0
VCE=5V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
120
V
120
V
5
V
0.1 µA
0.1 µA
80
240
1
V
1
V
120
MHz
30
pF
J CLASSIFICATION OF hFE(1)
ERank
WRange
O
80-160
Y
120-240
Marking
CO1
CY1
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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