2SC3146 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'2SC3146' PDF : 3 Pages View PDF
Inchange Semiconductor
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
VCE(sat)-1 Collector-emitter saturation voltage IC=3.5A ,IB=7mA
VCE(sat)-2 Collector-emitter saturation voltage IC=3.5A ,IB=7mA
ICBO
Collector cut-off current
VCB=40V, IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=3.5A ; VCE=2V
Product Specification
2SC3146
MIN TYP. MAX UNIT
60
V
70
V
1.5
V
2.0
V
0.1
mA
3.0
mA
2000
2
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