2SC3184 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2SC3184' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High breakdown voltage -
: VCBO≥900V
·Good Linearity of hFE
APPLICATIONS
·Power amplifier applications
·Switching Regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC3184
SPTECH website：www.superic-tech.com
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