2SC3223 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2SC3223' PDF : 2 Pages View PDF
1
2
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage'' IC=10A;IB=1A
VsE(sat) Base-Emitter Saturation Voltage
IC=10A;IB=1A
ICBO
Collector Cutoff Current
VCB= 230V; IE= 0
ICEO
Collector Cutoff Current
VCE= 230V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; lc= 0
hFE
DC Current Gain
lc= 20A; VCE= 2V
fi
Current-Gain—Bandwidth Product lc= 2A; VCe= 1 0V
Switching times
'on
Turn-On Time
lstg
Storage Time
tf
Fall Time
IC=200A;IB1=2A;IB2=4A
2SC3223
MIN TYP. MAX UNIT
230
V
1.0
V
1.5
V
100 n A
100 w A
100 n A
10
20
MHz
0.3
PS
0.5
ns
0.1 |j s
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