2SC3691 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2SC3691' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V (Min)
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
2.5
A
25
W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
SPTECH website：www.superic-tech.com
2SC3691
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