2SC3886A View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SC3886A

Silicon NPN Power Transistors

Inchange Semiconductor 

1 2 3

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A

VBEsat Base-emitter saturation voltage

IC=6A ;IB=1.5A

ICBO

Collector cut-off current

VCB=1500V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

ts

Storage time

tf

Fall time

Resistive load

ICP=6A ;IB1=-IB2=1.2A

RL=33.3Ω

Product Specification

2SC3886A

MIN TYP. MAX UNIT

600

V

5.0

V

1.5

V

1.0 mA

10

μA

8

15

1

3

MHz

210

pF

2.5

μs

0.15 μs

2

Share Link: