2SC4130 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SC4130

Silicon NPN Power Transistors

Inchange Semiconductor 

1 2 3 4

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A

VBEsat Base-emitter saturation voltage

IC=3A ;IB=0.6A

ICBO

Collector cut-off current

VCB=500V; IE=0

IEBO

Emitter cut-off current

VEB=10V; IC=0

hFE

DC current gain

IC=3A ; VCE=4V

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

fT

Transition frequency

IE=-0.5A ; VCE=12V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=3A; IB1=0.3A

IB2=-0.6A

VCC=200V ,RL=67Ω

Product Specification

2SC4130

MIN TYP. MAX UNIT

400

V

0.5

V

1.3

V

100 μA

100 μA

10

30

50

pF

15

MHz

1.0

μs

2.2

μs

0.5

μs

2

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