2SC4769 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'2SC4769' PDF : 4 Pages View PDF
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4769
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=5A;IB=1.7 A
5
V
VBEsat Base-emitter saturation voltage
IC=5A;IB=1.7 A
1.5
V
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0
800
V
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
VEB=4V; IC=0
VCB=800V; IE=0
40
130 mA
10
μA
ICES
Collector cut-off current
VCE=1500V; RBE=0
1
mA
hFE-1
DC current gain
IC=1 A ; VCE=5V
8
hFE-2
DC current gain
IC=5A ; VCE=5V
3
8
VF
Diode forward voltage
固IN电C半H导AN体GE SEMICONDUTOR Switching times
tstg
Storage time
tf
Fall time
hFE-2 classifications
IEC=7A
IC=4A;RL=33.3Ω
IB1=0.8A;- IB2=1.6A
VCC=200V
2.0
3.0
0.1
0.2
V
μs
μs
1
2
3
3-5
4-6
5-8
2
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