Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC4769
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
VCEO(SUS) Collector-emitter sustaining voltage
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
ICES
Collector cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VF
Diode forward voltage
Switching times
tstg
Storage time
tf
Fall time
CONDITIONS
IC=5A;IB=1.7 A
IC=5A;IB=1.7 A
IC=100mA;IB=0
VEB=4V IC=0
VCB=800V IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
IEC=7A
IC=4A;RL=33.3Ω
IB1=0.8A;- IB2=1.6A
VCC=200V
hFE-2 classifications
1
2
3
3-5
4-6
5-8
MIN
TYP.
MAX UNIT
5
V
1.5
V
800
V
40
130
mA
10
μA
1
mA
8
3
8
2.0
V
3.0
μs
0.1
0.2
μs
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