SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4769
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A;IB=1.7 A
VBEsat
Base-emitter saturation voltage
IC=5A;IB=1.7 A
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
ICBO
ICES
hFE-1
hFE-2
VF
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
Diode forward voltage
VCB=800V; IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=5A ; VCE=5V
IEC=7A
Switching times
tstg
Storage time
tf
Fall time
IC=4A;RL=33.3A
IB1=0.8A;- IB2=1.6A
VCC=200V
hFE-2 classifications
1
2
3
3-5
4-6
5-8
MIN TYP. MAX UNIT
5
V
1.5
V
800
V
40
130 mA
10
µA
1
mA
8
3
8
2.0
V
3.0
µs
0.1
0.2
µs
2