2SC4916 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2SC4916' PDF : 2 Pages View PDF
1
2
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
~
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4916
DESCRIPTION
• High Breakdown Voltage-
= VCBo=1500V(Min)
• High Switching Speed
• Low Saturation Voltage
• Built-in Damper Diode
APPLICATIONS
• Horizontal output applications for medium resolution
displays color TV.
•
j
:
v
123
'-T 1 J *A*. .-3 i I
3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-3P(K)iS package
„Q
t.
_••- S ••--
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current- Continuous
7
A
lew
Collector Current- Continuous
14
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
3.5
A
50
W
150
°C
Tstg
Storage Temperature Range
-55-150
'C
A
* 11
•,*'• •'' '>~v
4
!I "k *
i
K
L •-
t
•• •* J
- o *• R "
- - N •«-
mm
DM WIN
A 24.30
B 15.20
C 5.20
D 0.66
F 3.30
G 3.90
R 4.30
J 0.80
K 18.30
L 1.90
N 10.70
Q 4.40
R 3.30
S 3.20
U 9.50
Y 1.90
Z I 1.40
MAX
24,70
15.80
5.80
0.85
3.90
4.10
4.70
1.00
18.70
2.10
11.10
4.60
3.70
3.40
9.70
2.10
1.60
N,l Semi-CoiKliietors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. I lo\\e\er. N.I Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use.
N.I Scmi-l'(inductors enctuinmcs customers to veril's thai datasheets are current before placing orders.
Quality Semi-Conductors
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