2SC5200 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'2SC5200' PDF : 3 Pages View PDF
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5200
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
230
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A
VBE(on)
Base-Emitter On Voltage
IC= 7A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= 230V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
3.0
V
1.5
V
5
μA
5
μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 7A ; VCE= 5V
35
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
200
pF
30
MHz
hFE-1 Classifications
R
O
55-110 80-160
isc Website：www.iscsemi.cn
2
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