2SC5271 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2SC5271' PDF : 2 Pages View PDF
1
2
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=2S'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)C£0 Collector-Emitter Breakdown Voltage lc=10mA;lB=0
VcE(sat)
VeE(sat)
ICBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
lc= 2.5A; IB= 0.5A
lc= 2.5A; IB= 0.5A
VOB= 300V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= TV; I0= 0
hFE-1
DC Current Gain
lc=2.5A;VCE=2V
hFE-2
DC Current Gain
lc= 1mA; VCE=2V
COB
Output Capacitance
!E=O; VoB=10V;f= 1.0MHz
fl
Current-Gain—Bandwidth Product
lc=0.5A;VCE=12V
Switching times
ton
Turn-on Time
'stg
Storage Time
tf
Fall Time
lc=2.5A,RL=60fi,
lai=0.5A;lB2=-1.0A,Vcc= 150V
2SC5271
MIN TYP. MAX UNIT
200
V
1.0
V
1.5
V
100 y A
100 w A
10
30
15
45
pF
10
MHz
0.3 u s
1.0
US
0.1 w s
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