2SC5305 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2SC5305' PDF : 2 Pages View PDF
1
2
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC5305
DESCRIPTION
• High Breakdown Voltage
:V(BR)CBo=120QV(Min)
• High Speed Switching
APPLICATIONS
• Designed for inverter lighting applications.
122
PIN 1 BASE
2 COLLECTOR
3.BWITTER
TO-220F package
•C
Absolute maximum ratings (Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
9
V
Ic
Collector Current-Continuous
6
A
I CM
Collector Current-Peak
Collector Power Dissipation
@Ta=25°C
PC
Collector Power Dissipation
@TC=25°C
12
A
2
W
35
T,
Junction Temperature
150
"C
Tstg
Storage Temperature Range
-55-150
r
D
J --
N
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
q 2.70 2.90
R 2.20 2.40
S 2.65 2.85
u 6.40 6.60
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions vvithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I lowever, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use,
N.I Semi-Conduclors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Share Link: 
