2SC5993 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2SC5993' PDF : 2 Pages View PDF
1
2
Silicon NPN Power Transistor
2SC5993
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; le= 0
180
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 1A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB=180V;IE=0
0.5
V
100 u A
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
100 uA
hpE
DC Current Cain
lc= 0.1 A; VCE= 5V
60
240
fi
Current-Gain—Bandwidth Product
lc= 0.2A; VCE= 10V; f= 10MHz
130
MHz
COB
Output Capacitance
!E= 0; VCB= 10V; ftest= 1.0MHz
10
pF
Switching Time, Resistance Loaded
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 0.4A, IB1=-IB2= 0.04A;
VCC=100V
0.1
us
0.5
us
0.1
us
• hFE Classifications
Q
60-140 120-240
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