2SC867 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

MFG CO.

2SC867

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

1 2 3

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A

VBEsat Base-emitter saturation voltage

IC=1A; IB=0.2 A

ICBO

Collector cut-off current

VCB=400V;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=0.1A ; VCE=3V

fT

Transition frequency

IC=0.2A ; VCE=10V

Product Specification

2SC867

MIN TYP. MAX UNIT

150

V

5

V

1.0

V

1.5

V

100 μA

100 μA

50

8

MHz

2

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