2SD1555 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

MFG CO.

2SD1555

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

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SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

hFE

DC Current Gain

IC= 0.5A ; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 5A

fT

Current-Gain—Bandwidth Product

IC= 0.1A ; VCE= 10V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

tf

Fall Time

ICP= 4A , IB1(end)= 0.8A

2SD1555

MIN TYP. MAX UNIT

5

V

5.0

V

1.5

V

10 μA

8

2.0

V

3

MHz

165

pF

0.5 1.0 μs

SPTECH website：www.superic-tech.com

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