2SD428 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2SD428' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High Power Dissipation-
: PC= 60W(Max)@TC=25℃
·Complement to Type 2SB558
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 40W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
7
A
60
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SD428
SPTECH website：www.superic-tech.com
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