2SD5076 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'2SD5076' PDF : 3 Pages View PDF
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A;IB=0.8A
IEBO
Emitter cut-off current
VEB=5V; IC=0
ICBO
Collector cut-off current
hFE
DC current gain
fT
Transition frequency
tf
Fall time
VCB=800V; IE=0
IC=1 A ; VCE=5V
IC=1 A ; VCE=10V
IC=4A;IB1=0.8A;IB2=-1.6A
VCC=200V;RL=50Ω
Product Specification
2SD5076
MIN TYP. MAX UNIT
5.0
V
1.5
V
1.0 mA
10
μA
8
3
MHz
0.4
μs
2
Share Link: 
