2SD904 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2SD904' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 3A
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
7
A
ICM
Collector Current- Peak
Collector Power Dissipation
@ Ta= 25℃
PC
Collector Power Dissipation
@ TC= 25℃
TJ
Junction Temperature
10
A
3
W
50
150
℃
Tstg
Storage Temperature Range
-40~150
℃
SPTECH website：www.superic-tech.com
2SD904
1
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