30EPH03 View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part Name

Description

MFG CO.

30EPH03

30Amperes,300Volts Single Ultra Fast Recovery Epitaxial Diode

Thinki Semiconductor Co., Ltd. 

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30EPH03

Electrical characteristics (Ta=25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Breakdown voltage VBR,

Blocking voltage

VR

IR=100µA

300

Forward voltage

(Per Diode)

VF

IF=30A

IF=30A, Tj =125°C

Reverse leakage

current(Per Diode)

IR

VR= VRRM

Tj=150°C, VR=300V

Reverse recovery

time(Per Diode)

IF=0.5A, IR=1A, IRR=0.25A

trr

IF=1A,VR=30V, di/dt =200A/us

Typ. Max. Units

0.96 1.20

V

0.85 1.00

10

µA

100

35

45

ns

26

40

Thermal characteristics

Paramter

Junction-to-Case

Symbol

RθJC

Typ

Units

0.8

℃/W

Electrical performance (typic)

Rev.08T

© 1995 Thinki Semiconductor Co., Ltd.

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http://www.thinkisemi.com.tw/

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