3DD13002 View Datasheet(PDF) - Transys Electronics Limited
Part Name
Description
MFG CO.
'3DD13002' PDF : 1 Pages View PDF
1
Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
3DD13002 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
1.25 W (Tamb=25℃)
Collector current
ICM:
1A
Collector-base voltage
V(BR)CBO:
600 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
Ic=1mA, IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
6
Collector cut-off current
ICBO
VCB= 600V, IE=0
Emitter cut-off current
IEBO
VEB= 6V, IC=0
DC current gain
hFE(1)
VCE= 10V, IC= 200 mA
9
hFE(2)
VCE= 10V, IC=250 µA
5
Collector-emitter saturation voltage
VCE(sat)
IC=200mA, IB= 40 mA
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
VBE(sat)
IC=200mA, IB= 40 mA
fT
VCE=10V, Ic=100mA
5
f =1MHz
tf
IC=1A, IB1=-IB2=0.2A
ts
VCC=100V
TYP
MAX UNIT
V
V
V
100
µA
100
µA
40
0.8
V
1.1
V
MHz
0.5
µs
2.5
µs
CLASSIFICATION OF hFE(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40
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