3DD301C View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'3DD301C' PDF : 2 Pages View PDF
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD301C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 5V
MIN TYP. MAX UNIT
100
V
6
V
200
V
2.0
V
0.1 mA
0.1 mA
30
250
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