4MBI400VG-060R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ SW mode A ]
Switching time vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+10/-39Ω, Tj=125°C (T1, T2)
10000
toff
ton
1000
tr
tf
100
[ SW mode A ]
Switching time vs. Collector current (typ.)
VCC=400V, IC=400A, VGE=±15V, Tj=125°C
10000
toff
1000
100
ton
tr
tf
10
0
100 200 300 400 500 600 700
Collector current: IC [A]
[ SW mode A ]
Switching loss vs. gate resistance (typ.)
VCC=400V, IC=400A, VGE=±15V
200
Eoff(125°C)
100
Eon(125°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
0
1
10 Err(25°C) 100
1000
Gate resistance : RG [Ω] (T1, T2)
[ T1, T2 ]
Forward current vs. forward on voltage (typ.)
chip
800
700
Tj=25°C
Tj=125°C
600
500
400
300
200
100
0
0
1
2
3
4
Forward on voltage : VF [V]
5
10
1
10
100
Gate resistance : RG [Ω] (T1, T2)
[ SW mode A]
Switching loss vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+10/-39Ω (T1, T2)
150
Eoff(125°C)
Eoff(25°C)
100
Eon(125°C)
50
Eon(25°C)
Err(125°C)
0
Err(25°C)
0 100 200 300 400 500 600 700
Collector current: IC [A]
[ T1, T2 ]
Reverse recovery characteristics (typ.)
VCC=400V, VGE=±15V, RG=+10/-39Ω(T1, T2)
1000
trr(125°C)
trr(25°C)
100
Irr(125°C)
Irr(25°C)
10
0
100 200 300 400 500 600
Forward current : IF [A]