6MBP100VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
VDC=300V,VCC=15V,Tj=25℃
10
8
Eon
6
4
Eoff
2
Err
0
0
50
100
150
200
Collector current : IC [ A ]
Reversed biased safe operating area
VCC=15V,Tj≦125℃[Main Terminal] (min.)
400
Switching Loss vs. Collector Current (typ.)
VDC=300V,VCC=15V,Tj=125℃
10
Eon
8
6
4
Eoff
2
Err
0
0
50
100
150
200
Collector current : IC [ A ]
Transient thermal resistance (max.)
10
300
1
200
0.1
RBSOA
100
(Repetitive pulse)
FWD
IGBT
0
0
200
400
600
800
Collector-Emitter voltage : VCE [ V ]
0.01
0.001
0.01
0.1
1
10
Pulse width : PW [ sec ]
500
400
300
200
100
0
0
Power derating for IGBT (max.)
[per device]
50
100
Case Temperature : TC [ ℃ ]
150
6
300
250
200
150
100
50
0
0
Power derating for FWD (max.)
[per device]
50
100
150
Case Temperature : TC [ ℃ ]