6MBP50RTB060
Main circuit characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Tj=25°C(Chip)
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage VCE (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Chip)
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage VCE (V)
Forward current vs. Forward voltage
(Chip)
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
Foeward voltage VF (V)
IGBT-IPM
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage VCE (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage VCE (V)
Forward current vs. Forward voltage
(Terminal)
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
Foeward voltage VF (V)