A3980
Automotive DMOS Microstepping Driver
with Translator
ELECTRICAL CHARACTERISTICS (continued) at TJ = –40°C to +150ºC, VBB = 14 V, VDD = 3.0 to 5.5 V (unless otherwise noted)
Characteristics
Symbol
Test Conditions
Min. Typ.1 Max. Units
Current Control
Blank Time
Fixed Off Time
tBLANK
tOFF
RT = 56 K , CT = 680 pF
RT = 56 K , CT = 680 pF
700
950
1200
ns
30
38
46
μs
Mixed Decay Trip Points
PFDH
PFDL
–
–
0.60 VDD
0.21 VDD
–
V
Crossover Dead Time
tDT
–
100
475
800
ns
Recommended Reference Input Voltage
– VREF
0.8
–
4
V
Reference Input Current2
IREF
–
–3
0
3
μA
Current Trip-Level Error3
2 V < VREF < 4 V, %ITripMAX = 38%
errI
2 V < VREF < 4 V, %ITripMAX = 70%
–
2 V < VREF < 4 V, %ITripMAX = 100%
±15
–
±10
%
±5
Thermal Protection
Thermal Shutdown
Thermal Shutdown Hysteresis
TSD –
– TSDH
160
170
180
ºC
–
15
–
ºC
Diagnostics
Max VDS on High-Side Bridge FETs
Max VDS on Low-Side Bridge FETs
VDS Fault Measurement Delay
Minimum Load Current
VBB Overvoltage Lockout
VBB Overvoltage Lockout Hysteresis
VREG Undervoltage Lockout
VDD Enable Threshold
VDD Enable Threshold Hysteresis
VDSHT
VDSLT
tSCT
IOC
VOVB
VOVBH
VUVR
VUVD
VUVDH
Sampled after tBLANK + tSCT
Sampled after tBLANK + tSCT
–
w.r.t. ITRIPMAX at Home position
VBB rising
–
VREG falling
VDD rising
–
–
1.5
–
V
–
1.5
–
V
–
700
–
ns
–
35
–
%
32
34
36
V
2
–
4
V
5.3
5.7
6.0
V
2.45
2.7
2.95
V
50
100
–
mV
1Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. Performance may vary
for individual units, within the specified maximum and minimum limits.
2Negative current is defined as coming out of (sourcing from) the specified device pin.
× 3errI = (ITrip – IProg ) ⁄ IProg , where IProg = %ITripMAX ITripMAX.
Allegro MicroSystems, Inc.
5
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com