6595
8-BIT SERIAL-INPUT,
DMOS POWER DRIVER
ELECTRICAL CHARACTERISTICS at TA = +25°C, VDD = 5 V, tir = tif ≤ 10 ns (unless otherwise
specified).
Characteristic
Output Breakdown
Voltage
Symbol
V(BR)DSX
Test Conditions
IO = 1 mA
Min.
50
Limits
Typ.
Max.
—
—
Units
V
Off-State Output
Current
IDSX
VO = 40 V
VO = 40 V, TA = 125°C
—
0.05
1.0
µA
—
0.15
5.0
µA
Static Drain-Source
rDS(on) IO = 250 mA, VDD = 4.5 V
—
1.3
2.0
Ω
On-State Resistance
IO = 250 mA, VDD = 4.5 V, TA = 125°C
—
2.0
3.2
Ω
IO = 500 mA, VDD = 4.5 V (see note)
—
1.3
2.0
Ω
Nominal Output
Current
ION
VDS(on) = 0.5 V, TA = 85°C
—
250
—
mA
Logic Input Current
Logic Input Hysteresis
SERIAL-DATA
Output Voltage
IIH
IIL
VI(hys)
VOH
VOL
Prop. Delay Time
tPLH
tPHL
Output Rise Time
tr
VI = VDD = 5.5 V
VI = 0, VDD = 5.5 V
IOH = -20 µA, VDD = 4.5 V
IOH = -4 mA, VDD = 4.5 V
IOL = 20 µA, VDD = 4.5 V
IOL = 4 mA, VDD = 4.5 V
IO = 250 mA, CL = 30 pF
IO = 250 mA, CL = 30 pF
IO = 250 mA, CL = 30 pF
—
—
1.0
µA
—
—
-1.0
µA
—
1.3
—
V
4.4
4.49
—
V
4.1
4.3
—
V
—
0.002
0.1
V
—
0.2
0.4
V
—
650
—
ns
—
150
—
ns
—
7500
—
ns
Output Fall Time
Supply Current
tf
IDD(OFF)
IDD(ON)
IDD(fclk)
IO = 250 mA, CL = 30 pF
All inputs low
VDD = 5.5 V, Outputs on
fclk = 5 MHz, CL = 30 pF, Outputs off
—
425
—
ns
—
15
100
µA
—
150
300
µA
—
0.6
5.0
mA
Typical Data is at VDD = 5 V and is for design information only.
NOTE — Pulse test, duration ≤100 µs, duty cycle ≤2%.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000