ACE1512EBMS+H View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
ACE1512EBMS+H
ACE Technology Co., LTD.
'ACE1512EBMS+H' PDF : 6 Pages View PDF
ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They
offer operation over a wide gate drive range from 1.8V to 8V.
It is ESD protected.
Features
• VDS (V)=20V
• ID=6.5A (VGS=4.5V)
• RDS(ON)<21mΩ (VGS=4.5V)
• RDS(ON)<25mΩ (VGS=2.5V)
• RDS(ON)<33mΩ (VGS=1.8V)
• ESD Protected : 2000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC TA=25℃
TA=70℃
Drain Current (Pulsed)*B
Power Dissipation
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Ratings Unit
VDSS
20
V
VGSS
±8
V
6.5
ID
A
5.2
IDM
24 A
1
PD
W
0.64
TJ/TSTG -55~150 ℃
Packaging Type
TSOT-23-3
VER 1.1 1
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