ACE1522B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE1522B' PDF : 6 Pages View PDF
ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
On/Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -50
VDS=-50V, VGS=0V
Zero Gate Voltage Drain Current
IDSS
VDS=-50V, VGS=0V,
TJ=125℃
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
On characteristics b
V
-15
uA
-60
±10 nA
Static Drain-Source On-Resistance RDS(ON) VGS=-5V, ID=-0.1A
10 Ω
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-1mA -0.8 -1.75
-2
V
Forward Transconductance
gFS
VDS=-25V, ID=-0.1A 0.05 0.6
S
Switching characteristics b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
VDS=-25V, ID=-0.1A
VGS=-5V
Qgd
Td(on)
tf
td(off)
tf
VDD=-30V, ID=-0.27A,
VGS=-10V
RGEN=6Ω
Dynamic characteristics
0.9
1.3
0.2
nC
0.3
2.5
5
6.3
13
ns
10
20
4.8
9.6
Input Capacitance
Ciss
33
Output Capacitance
Coss
VDS=-10V, VGS=0V
f=200KHz
38
pF
Reverse Transfer Capacitance
Crss
36
Gate Resistance
RG
VGS=-15mV,
f=1.0MHz
9
Ω
Drain-source diode characteristics and maximum ratings b
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, IS=-0.26A (2)
-0.8 -1.2 V
Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the
user's board design.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
VER 1.2 2
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