ACE1543B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE1543B' PDF : 5 Pages View PDF
ACE1543B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
VDS(V) =-30V
ID=-4.5A
RDS(ON)=68mΩ @ VGS=-10V
RDS(ON)=83mΩ @ VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS -30 V
Gate-Source Voltage
Continuous Drain Current * AC
TA=25℃
TA=70℃
VGSS
ID
±20 V
-4.5
A
-3.6
Pulsed Drain Current * B
IDM
-20 A
Power Dissipation
TA=25℃
PD
2W
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC
Packaging Type
SOT-223
VER 1.2 1
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