ACE2341BBM View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE2341BBM' PDF : 6 Pages View PDF
ACE2341B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
State
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20
Zero Gate Voltage Drain Current
IDSS
VDS=-16V, VGS=0V
Gate Leakage Current
IGSS
VGS=±12V, VDS=0V
V
-1 uA
±100 nA
Static Drain-Source On-Resistance RDS(ON)
VGS=-4.5V, ID=-4.3A
VGS=-2.5V, ID=-2.5A
55
65
70
85 mΩ
Gate Threshold Voltage
Forward Transconductance
Drain Forward Voltage
VGS=-1.8V, ID=-2A
112 125
VGS(th) VDS=VGS, ID=-250uA -0.6 -0.81 -1.4
V
gFS
VDS=-5V, ID=-4A
15
S
VSD
IS=-1.7A,VGS=0V
-0.85 -1
V
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
td(off)
tf
VDS=-10V, ID=-4.5A
VGS=-4.5V
VDS=-10V,RL=10Ω
ID=-1A, RGEN=6Ω
VGS=-4.5V
Dynamic
8.92 11.6
1.8 2.34 nC
2.04 2.65
16.08 32.16
5.28 10.56
ns
37.6 75.2
7.28 14.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
VDS=-10V, VGS=0V
f=1MHz
Crss
800 960
131
pF
103
Note: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2 2
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