ACE4441BFM-H View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE4441BFM-H' PDF : 6 Pages View PDF
ACE4441B
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -60
V
Zero Gate Voltage Drain Current
IDSS
VDS=-48V, VGS=0V
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
-1 uA
100 nA
Static Drain-Source On-Resistance RDS(ON)
VGS=-10V, ID=-4.5A
VGS=-4.5V, ID=-3.5A
64
75
mΩ
79
90
Gate Threshold Voltage
VGS(th) VDS=VGS, IDS=-250µA -1.0 -1.7
-2.5
V
Forward Transconductance
gFS
VGS=-10V, ID=-7A
9
S
Diode Forward Voltage
VSD
Maximum Body-Diode Continuous
Current
IS
ISD=-1A, VGS=0V
-0.76 -1
V
-3
A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=-30V, ID=-7A
VGS=-10V
Qgd
15
19
2.5
nC
3
Turn-On Delay Time
Td(on)
8
16
Turn-On Rise Time
Turn-Off Delay Time
tf
td(off)
VDS=-30V, RL=10Ω,
VGS=-10V, RGEN=3Ω
3.8
7.6
ns
31.5 63
Turn-Off Fall Time
tf
7.5
15
Dynamic
Input Capacitance
Ciss
760
Output Capacitance
Coss
VDS=-30V, VGS=0V
f=1MHz
90
pF
Reverse Transfer Capacitance
Crss
40
Note: 1. The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2 2
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