ACE4446B View Datasheet(PDF) - ACE Technology Co., LTD.
Part Name
Description
MFG CO.
'ACE4446B' PDF : 6 Pages View PDF
ACE4446B
N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE4446B XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
Electrical CharacteristicsTA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA
30
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
Static Drain-Source On-Resistance RDS(ON)
VGS=10V, ID=15A
VGS=4.5V, ID=10A
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
1
Forward Transconductance
gFS
VDS=5V, ID=15A
Diode Forward Voltage
VSD
ISD=2A, VGS=0V
Maximum Body-Diode Continuous
Current
IS
5.9
7
1.9
25
0.71
V
1
uA
100 nA
8.5
mΩ
13
3
V
S
1.0 V
2
A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
td(off)
tf
VDS=15V, ID=14A
VGS=5V
VDS=15V, VGS=10V
RGEN=6Ω, RL=15Ω
Dynamic
16 20.8
5
6.5 nC
3
3.9
17
34
5
10
ns
50
100
10
20
Input Capacitance
Ciss
2470
Output Capacitance
Coss
VDS=15V, VGS=0V
f=1MHz
325
pF
Reverse Transfer Capacitance
Crss
185
Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2 2
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